发明名称 TWO LEVEL MEMORY FULL LINE WRITES
摘要 A memory controller receives a memory invalidation request that references a line of far memory in a two level system memory topology with far memory and near memory, identifies an address of the near memory corresponding to the line, and reads data at the address to determine whether a copy of the line is in the near memory. Data of the address is to be flushed to the far memory if the data includes a copy of another line of the far memory and the copy of the other line is dirty. A completion is sent for the memory invalidation request to indicate that a coherence agent is granted exclusive access to the line. With exclusive access, the line is to be modified to generate a modified version of the line and the address of the near memory is to be overwritten with the modified version of the line.
申请公布号 WO2016160202(A1) 申请公布日期 2016.10.06
申请号 WO2016US19698 申请日期 2016.02.26
申请人 INTEL CORPORATION 发明人 BLANKENSHIP, Robert G.;CHAMBERLAIN, Jeffrey D.;LIU, Yen-Cheng;GEETHA, Vedaraman
分类号 G06F12/08;G06F12/02;G06F13/16 主分类号 G06F12/08
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