THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF

摘要

A thin film transistor (TFT) includes a semiconductive layer, a first inter-layer drain (ILD) layer, a second ILD layer, and at least one contact hole passing through the first ILD layer and the second ILD layer. The semiconductive layer includes a channel region, a first lightly doped drain (LDD) region, a second LDD region, a first heavily doped drain (HDD) region, and a second HDD region. The at least one contact hole includes a first portion passing through the second ILD layer and a second portion passing through the first ILD layer. The second portion gradually narrows along a direction from a top to a bottom of the first ILD layer.

主权项

1. A thin film transistor (TFT) comprising:
a substrate; a semiconductive layer located on the substrate and comprising a channel region, a first lightly doped drain (LDD) region and a second LDD region respectively located at opposite sides of the channel region, a first heavily doped drain (HDD) region located at a side of the first LDD region away from the channel region, and a second HDD region located at a side of the second LDD region away from the channel region; a first inter-layer drain (ILD) layer located on the semiconductive layer; a second ILD layer located on the first ILD layer; and at least one contact hole passing through the first ILD layer and the second ILD layer, the at least one contact hole comprising a first portion passing through the second ILD layer and a second portion passing through the first ILD layer, wherein the second portion gradually narrows along a direction from a top to a bottom of the first ILD layer; a cross-sectional view of the first portion is rectangular, and a cross-sectional view of the second portion is trapezoidal; the first portion has a same size along a direction from a top to a bottom of the second ILD layer; a projected area of the first portion projected on the substrate is greater than an area of the first HDD region.