REPLACEMENT METAL GATE DIELECTRIC CAP

摘要

A method for manufacturing a field effect transistor includes chelating a molecular mask to a replacement metal gate in a field effect transistor. The method may further include forming a patterned dielectric layer on a bulk dielectric material and a gate dielectric barrier in one or more deposition steps. The method may include removing the molecular mask and exposing part of the gate dielectric barrier before depositing a dielectric cap that touches the gate dielectric barrier and the replacement metal gate.

主权项

1. An assembly, comprising:
a field effect transistor stack having:
a semiconductor substrate with a horizontal surface;a bulk dielectric material on the horizontal surface;a replacement metal gate with:
a gate metal having a metal top surface; anda gate fill with a fill top surface;a gate oxide on the horizontal surface and surrounding the gate metal;at least one spacer on the horizontal surface and between the bulk dielectric material and the gate oxide wherein the chelating mask is directly attached to the metal top surface and the fill top surface of the replacement metal gate, and wherein the chelating mask is further above and adjacent to the bulk dielectric material; anda chelating mask chelated to the metal top surface and the fill top surface.