CONTACT FOR HIGH-K METAL GATE DEVICE

摘要

An integrated circuit having an improved gate contact and a method of making the circuit are provided. In an exemplary embodiment, the method includes receiving a substrate. The substrate includes a gate stack disposed on the substrate and an interlayer dielectric disposed on the gate stack. The interlayer dielectric is first etched to expose a portion of the gate electrode, and then the exposed portion of the gate electrode is etched to form a cavity. The cavity is shaped such that a portion of the gate electrode overhangs the electrode. A conductive material is deposited within the cavity and in electrical contact with the gate electrode. In some such embodiments, the etching of the gate electrode forms a curvilinear surface of the gate electrode that defines the cavity.

主权项

1. An integrated circuit comprising:
a device gate disposed on a substrate, wherein the device gate includes:
an interfacial layer disposed on the substrate;a dielectric material disposed on the interfacial layer; anda gate electrode disposed on the dielectric material; and a contact extending into and conductively coupled to the gate electrode, wherein the contact is shaped such that a portion of the gate electrode is disposed on the contact opposite the substrate.