发明名称 METHOD AND APPARATUS FOR OPTIMIZED MEMORY TEST STATUS DETECTION AND DEBUG
摘要 Embodiments contained in the disclosure provide a method for memory built-in self-testing (MBIST). The method begins when a testing program is loaded, which may be from an MBIST controller. Once the testing program is loaded MBIST testing begins. During testing, memory failures are determined and written to a failure indicator register. The writing to the failure indicator register occurs in parallel with the ongoing MBIST testing. An apparatus is also provided. The apparatus includes a memory data read/write block, a memory register, a memory addressor, and a memory read/write controller. The apparatus communicates with the memories under test through a memory address and data bus.
申请公布号 US2016293272(A1) 申请公布日期 2016.10.06
申请号 US201514676501 申请日期 2015.04.01
申请人 QUALCOMM Incorporated 发明人 Anand Ashutosh;Bhat Shankarnarayan;Sudhakaran Nikhil;Raghuraman Praveen;Bhushan Singh Nishi;Bhat Anand;Kothiala Abhinav;Muchini Sanjay;Balachandar Arun;Bhat Devadatta
分类号 G11C29/38;G11C29/44;G11C29/36 主分类号 G11C29/38
代理机构 代理人
主权项 1. A method of memory built-in self-testing (MBIST), comprising: loading a testing program; testing memories using the testing program; determining if any memory is failing; and writing to a failure indicator register in parallel with ongoing testing if any memory is failing.
地址 San Diego CA US