| 主权项 |
1. A plurality of memory cells; and
a data identification circuit, wherein each of the memory cells includes: a first bias node to which a first voltage is applied in a data reading, the first voltage being a positive voltage; a second bias node to which a second voltage is applied in the data reading, the second voltage being a negative voltage having substantially a same absolute value as the first voltage; a connection node; a first spin device element connected between the first bias node and the connection node; and a second spin device element connected between the connection node and the second bias node, wherein each of the first and second spin device elements is configured to have a first magnetization which is reversible and to take a selected one of first and second states depending on a direction of the first magnetization, wherein the first and second spin device elements are placed in different states selected from the first and second states, and wherein the data identification circuit identifies a data stored in each of the memory cells based on a polarity of a voltage generated on the connection node. |
