| 摘要 |
PROBLEM TO BE SOLVED: To provide a transistor with stable electric characteristics.SOLUTION: A semiconductor device comprises an oxide semiconductor, a first conductor, a first insulator, a second insulator, a third insulator, and a fourth insulator. The oxide semiconductor is arranged on the first insulator. The second insulator is arranged on the oxide semiconductor. The third insulator is arranged on the second insulator. The first conductor is arranged on the third insulator. The fourth insulator is arranged on the first conductor. The fourth insulator has a region in contact with an upper surface of the second insulator. The oxide semiconductor has a region overlapped with the first conductor via the second and third insulators. When seen from an upper surface, an outer periphery of the first insulator and an outer periphery of the second insulator are located outside an outer periphery of the oxide semiconductor.SELECTED DRAWING: Figure 1 |
