| 摘要 |
PROBLEM TO BE SOLVED: To establish a processing technique in manufacture of a semiconductor device in which an oxide semiconductor is used.SOLUTION: A gate electrode 202 is formed over a substrate 200, a gate insulating layer 204 is formed over the gate electrode, and an oxide semiconductor layer 206 is formed over the gate insulating layer. The oxide semiconductor layer is processed by wet etching to form an island-shaped oxide semiconductor layer. A conductive layer 212 that covers the island-shaped oxide semiconductor layer is formed. The conductive layer is processed by dry etching to form a source electrode or a drain electrodes 216a, 216b. A part of the island-shaped oxide semiconductor layer is removed to form a recessed portion 220 in the island-shaped oxide semiconductor layer.SELECTED DRAWING: Figure 1 |
