PHOTOVOLTAIC CELL WITH SILICON HETEROJUNCTION

摘要

The invention relates to a photovoltaic cell with silicon heterojunction comprising a doped crystalline silicon substrate, in which: —a first face of the substrate is successively covered with a passivation layer, an amorphous or p or p+ doped microcrystalline silicon layer and a layer of a transparent conducting material, —the second face of the substrate is successively covered with an amorphous or n or n+ doped microcrystalline silicon layer and a layer of a transparent conducting material. Between the substrate and the amorphous or n or n+ doped microcrystalline silicon layer, the cell comprises a layer of a crystalline semi-conducting material selected from gallium nitride or indium gallium nitride and having a conduction band that is sensitively aligned with the conduction band of the silicon and a band gap greater than that of silicon, in such a way as to promote an electron current while limiting a hole current in the substrate towards the amorphous or n or n+ doped microcrystalline silicon layer.

主权项

1. A photovoltaic cell with a silicon heterojunction, comprising an n- or p-type doped crystalline silicon substrate, wherein:
a first main face of the substrate is successively covered with a passivation layer, with a p− or p+-type doped amorphous or microcrystalline silicon layer and a layer of a transparent conductive material, the second main face of the substrate is successively covered with a layer of n− or n+-type doped amorphous or microcrystalline silicon and with a layer of a transparent conductive material, said cell further comprising, between the substrate and the n− or n+-type doped amorphous or microcrystalline silicon layer, a layer of a crystalline semi-conducting material selected from among gallium nitride and gallium and indium nitride and having a conduction band substantially aligned with the conduction band of silicon and a forbidden band greater than that of silicon, so that said crystalline semi-conducting material layer promotes a current of electrons while limiting a current of holes from the substrate to the n− or n+-type doped amorphous or microcrystalline silicon layer.