EDGE-EMITTING SEMICONDUCTOR LASER AND METHOD FOR THE PRODUCTION THEREOF

摘要

An edge-emitting semiconductor laser comprises a semiconductor structure, which has a layer sequence comprising layers overlapping along a direction of growth. The semiconductor structure is delimited laterally by a first facet (400) and a second facet (500). The semiconductor structure has a middle section (300) and a first edge section (410) adjacent to the first facet. The layer sequence is offset in the first edge section with respect to the middle section in the direction of growth (201). The semiconductor structure contains a substrate (100), a lower cladding layer (210), a lower waveguide layer (220), an active layer (230), an upper waveguide layer (240) and a top cladding layer (250). In the region of the facet, there is an electrically insulating intermediate layer (260), which prevents a current flow through the semiconductor structure in an edge section (410) of the facet (400).