REVERSE CONDUCTING POWER SEMICONDUCTOR DEVICE

摘要

A reverse-conducting power semiconductor is provided. It comprises a plurality of diode cells (312) and a plurality of gate commutated thyristor (GCT) cells (32). Each GCT cell (32) comprises first cathode layer (34), wherein the first cathode layer (34) of each GCT cell (32) includes at least three cathode layer regions (34a, 34b), which are separated from each other by a base layer (35), wherein in orthogonal projection onto a plane parallel to the first main side (41) each one of the cathode layer regions (34a, 34b) is strip-shaped with a length in a direction along a longitudinal axis thereof and a width (w, w') in a direction vertical to the longitudinal axis, wherein the diode cells (312) alternate with the GCT cells (32) in a lateral direction in at least a mixed part, wherein in each GCT cell (32), the width (w') of each one of the two outer cathode layer regions (34b) next to a diode cell (312) neighbouring to that GCT cell (32) is less than the width (w) of any intermediate cathode layer region (34a) between the two outer cathode layer regions (34b) in that GCT cell (32).