A SEMICONDUCTOR DEVICE AND A MANUFACTURING METHOD THEREOF

摘要

The present invention relates to a semiconductor device which consolidates a split gate type metal oxide nitride oxide semiconductor (MONOS) memory, and a trench capacity element which buries a portion of an upper electrode in a groove formed on a principal plane of a semiconductor substrate. The present invention may ameliorate upper surface smoothness of the upper electrode buried in the concerned groove. In order to form a control gate electrode CG forming a memory cell MC of the MONOS memory, a polysilicon film formed on a semiconductor substrate SB is buried in a groove D2 formed on a principal plane of the semiconductor substrate SB in a formation area of a capacity element CE to form an upper electrode UE including a polysilicon film in the groove D2.