发明名称 MONOCRYSTALLINE DIAMONDS AND METHODS OF GROWING THE SAME
摘要 A monocrystalline diamond having a corrected full width at half maxima after accounting for the Rayleigh width of a 514.5 nm laser, and exhibiting: a presence or absence of negatively-charged silicon vacancy defect depending on the diamond quality; a concentration level of neutral substitutional nitrogen at an absorption coefficient of 270 nm; an FTIR transmittance value at a 10.6 μm wavelength; a concentration of positively-charged substitutional nitrogen when the peak height is at 1332.5 cm-1; an absence of nitrogen-vacancy-hydrogen defect species when the wavelength is at 3123 cm-1; normalisation of spectra when the first order Raman peak is at 552.37 nm using 514.5 nm laser excitation; either a black or white sector and having a refractive index of retardation to thickness of diamond plates; or a reddish glow and a blue glow when the diamond is placed under 355 nm laser irradiation at room temperature in the dark.
申请公布号 WO2016144256(A1) 申请公布日期 2016.09.15
申请号 WO2016SG00001 申请日期 2016.03.09
申请人 IIA TECHNOLOGIES PTE. LTD. 发明人 DEVI SHANKER, Misra
分类号 C30B29/04;C23C16/27 主分类号 C30B29/04
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