| 摘要 |
PROBLEM TO BE SOLVED: To reduce parasitic capacitance by reducing a wiring width or by not overlapping transfer electrodes thereby to improve transfer deterioration caused by drive waveform corruption in high-speed drive; and improve light sensitivity by reducing a device height around a light-receiving part and increasing an opening area of the light-receiving part.SOLUTION: A solid state imaging device comprises a vertical charge transfer register 2 including: a vertical charge transfer part 7 which is arranged on an upper side of a semiconductor substrate 6 and has a predetermined width in planar view, for transferring charge of each signal in a vertical direction; a unit compositions of a plurality of transfer electrodes 31-34 in a first layer, which are sequentially and repeatedly arranged on the vertical charge transfer part 7 via a gate insulation film 81; metal drive distribution wires 43, 44 in a second layer, which are correspondingly connected to the plurality of transfer electrodes 33, 34 of each unit composition, respectively, and repeatedly arranged; and metal drive distribution lines 52, 51 in a third layer, which are connected to the plurality of transfer electrodes, 32, 31, respectively, and repeatedly arranged on the metal drive distribution lines 43, 44 in the second layer via an insulation film 83. |
