Semiconductor device, package structure thereof, and method for manufacturing the semiconductor device

摘要

A semiconductor device comprises a face-up active element (e.g. integrated circuit chip (30B)) and a face-up passive element (e.g. capacitor (10)), covered with insulation layer(s) (11, 21) formed on a silicon substrate (1); a wiring in form of a conductive layer (25) on the insulating layer; and at least one element connected to the wiring through the insulating layer via conductor plugs (16) in insulating layer. The device further comprises an external connecting electrode on the insulating layer. An independent claim is included for the manufacture of the semiconductor device.