| 摘要 |
A thin film transistor (10) is provided with a silicon substrate (1), a channel layer (2), a source electrode (3), a drain electrode (4), an insulating film (5), and a gate electrode (6). The channel layer (2), the source electrode (3), and the drain electrode (4) are linearly disposed on a protruding portion of a recessed/protruding shape of the silicon substrate (1), said channel layer, source electrode and the drain electrode being disposed in the longitudinal direction of the protruding portion. The channel layer (2) is formed of a carbon nanowall thin film, and the source electrode (3) and the drain electrode (4) are formed of a metal carbon nanowall thin film. The insulating film (5) is formed of SiO2, and is disposed in contact with the rear surface of the silicon substrate (1). The gate electrode (6) is formed of a Ti/Au laminated structure, and is disposed in contact with the insulating film (5). |
