SEMICONDUCTOR-SUBSTRATE MANUFACTURING METHOD AND SEMICONDUCTOR-DEVICE MANUFACTURING METHOD IN WHICH GERMANIUM LAYER IS HEAT-TREATED

摘要

A method of manufacturing a semiconductor substrate includes: heat-treating a germanium layer 30 with an oxygen concentration of 1×10 16 cm -3 or greater in a reducing gas atmosphere at 700°C or greater. Alternatively, a method of manufacturing a semiconductor substrate includes heat-treating a germanium layer 30 having an oxygen concentration of 1×10 16 cm -3 or greater in a reducing gas atmosphere so that the oxygen concentration decreases.