RESIST UNDERLAYER COMPOSITION AND METHOD OF MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE USING THE SAME

摘要

Disclosed is a resist underlayer composition that includes
(i) an organosilane condensation polymerization product obtained from at least one of the compounds of the Chemical Formula 1 and 2, and at least one of the compounds of the Chemical Formula 3 to 5; or
(ii) an organosilane condensation polymerization product including a repeating unit represented by the Chemical Formula 6; and
a solvent:
€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ [Chemical Formula 1]€ƒ€ƒ€ƒ€ƒ€ƒ[R 1 ] 3 Si-[Ph 1 ] l -Si[R 2 ] 3
€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ [Chemical Formula 2]€ƒ€ƒ€ƒ€ƒ€ƒ[R 1 ] 3 Si-[Ph 1 ] m -Ph 2
€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ [Chemical Formula 3]€ƒ€ƒ€ƒ€ƒ€ƒ[R 1 ] 3 Si- CH 2n -R 3
€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ [Chemical Formula 4]€ƒ€ƒ€ƒ€ƒ€ƒ[R 1 ] 3 Si-R 4
€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ [Chemical Formula 5]€ƒ€ƒ€ƒ€ƒ€ƒ[R 1 ] 3 Si-X-Si[R 2 ] 3
€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ [Chemical Formula 6]€ƒ€ƒ€ƒ€ƒ€ƒ(SiO 1.5 -[Ph 1 ] l -SiO 1.5 ) a (Ph 2 -[Ph 1 ] m -SiO 1.5 ) b (R 3 - CH 2n -SiO 1.5 ) c (R 4 -SiO 1.5 ) d SiO 1.5 -X-SiO 1.5 ) e ,
wherein 0‰¤a‰¤0.99, 0‰¤b‰¤0.99, 0.01‰¤a+b‰¤0.99, and 0‰¤c‰¤0.99, 0‰¤d‰¤0.99, 0‰¤e‰¤0.99, 0.01‰¤c+d+e‰¤0.99, a+b+c+d+e=1. In the above Chemical Formula 1 to 6, Ph 1 , Ph 2 , R 1 to R 4 , X, I, m, and n are the same as in the specification.