| 摘要 |
PROBLEM TO BE SOLVED: To provide a method that may produce many elements of excellent properties having a group III-V compound semiconductor single crystal having a component of low melting point and low dissociation pressure such as InSb and GaSb as a substrate at a time from a large single crystal.SOLUTION: A single crystal is grown as follows: raw materials are charged in a heat resistant vessel having a cylindrical side wall with an inner diameter of more than 6 inches. The vessel is disposed in a furnace and the raw material is melt by heating the inside of the furnace without using a sealant to suppress an evaporation of a group V element. The temperature in the furnace is controlled so that the temperature of the melt decreases vertically upward from the beneath at the rate of less than 10°C/cm to solidify the melt from the surface of the melt toward downward at the rate of 1 to 10 mm/h. |
