| 摘要 |
An embodiment of the present invention relates to a light emitting device. The light emitting device according to an embodiment of the present invention comprises: a first conductive semiconductor layer; an active layer which is arranged on the first conductive semiconductor layer and generates an ultraviolet wavelength; an electron blocking layer which is arranged on the active layer; a second conductive semiconductor layer which is arranged on the electron blocking layer; a third conductive semiconductor layer which is arranged on the second conductive semiconductor layer; and an electrode which is arranged on the third conductive semiconductor layer. The second and third conductive semiconductor layers include AlGaN semiconductors. The third conductive semiconductor layer has a composition of aluminum which is lower than a composition of aluminum of the second conductive semiconductor layer. A contact resistance according to an electrical contact area with the electrode is lower than a non-contact resistance of the second conductive semiconductor layer. According to the present invention, it is possible to improve an electrical contact between the second conductive semiconductor layer and the electrode. |
