发明名称 ラッチディバイダ
摘要 There are numerous types of dividers that have been employed at various frequency ranges. For many very high frequency ranges (i.e., above 30 GHz), dividers in CMOS have been developed. However, many of these designs use multiple stages. Here, however, a single stage divider has been provided that is adapted to operate at very high frequencies (i.e., 120 GHz). To accomplish this, it uses parasitic capacitances in conjunction with inductor(s) to form an LC tanks so as to take advantages of parasitics that normal degrade performance.
申请公布号 JP5976685(B2) 申请公布日期 2016.08.24
申请号 JP20130554570 申请日期 2012.02.15
申请人 日本テキサス・インスツルメンツ株式会社;テキサス インスツルメンツ インコーポレイテッド 发明人 リチャード グー;ダチュエン ホアン
分类号 H03K23/00 主分类号 H03K23/00
代理机构 代理人
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