| 摘要 |
A light emitting device according to an embodiment includes a first conductivity type semiconductor layer, an active layer on the first conductivity type semiconductor layer, an electron blocking layer on the active layer, and a second conductivity type semiconductor layer on the electron blocking layer. The electron blocking layer includes an In_xAl_yGa_(1-x-y)N based supper lattice layer (here, 0<=x<=1, 0<=y<=1). So, light efficiency can be improved. |
