| 摘要 |
PROBLEM TO BE SOLVED: To provide a dry etching method for forming a tapered wiring, which has a large selective ratio with respect to a base.SOLUTION: A wiring with a taper angle of 60° or less is formed by forming a film of a conduction material on a substrate and dry-etching the film of the conduction material with an ICP etching apparatus. Likewise, a gate wiring with a taper angle of 60° or less is formed by forming a film of a conduction material on a substrate and dry-etching the film of the conduction material with an ICP etching apparatus. Then, a gate insulation film is formed on the gate wiring, and an active layer is formed on the gate insulation film. |
