发明名称 |
Multi-Value Nonvolatile Organic Resistive Random Access Memory and Method for Preparing the Same |
摘要 |
Disclosed are a multi-value nonvolatile organic resistive random access memory and a method for preparing the same. The resistive random access memory comprises a top electrode, a bottom electrode and a middle functional layer located between the top electrode and the bottom electrode, the middle functional layer is at least two layers of parylene. The method comprises the steps of: growing material for the bottom electrode using physical vapor deposition method on a substrate; growing sequentially multiple layers of parylene on the bottom electrode by polymer chemical vapor deposition; defining the via for leading out the bottom electrode by lithography and etching; growing material for the top electrode on the parylene materials by using physical vapor deposition process, defining the top electrode material by lithography and lift-off, and leading out the bottom electrode. |
申请公布号 |
US2016240778(A1) |
申请公布日期 |
2016.08.18 |
申请号 |
US201415024996 |
申请日期 |
2014.03.31 |
申请人 |
PEKING UNIVERSITY |
发明人 |
Cai Yimao;Liu Yefan;Fang Yichen;Wang Zongwei;Li Qiang;Yu Muxi;Pan Yue;Huang Ru |
分类号 |
H01L45/00;G11C13/00 |
主分类号 |
H01L45/00 |
代理机构 |
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代理人 |
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主权项 |
1. A multi-value nonvolatile organic resistive random access memory, comprising a top electrode, a bottom electrode and a middle functional layer located between the top electrode and the bottom electrode, the middle functional layer is at least two layers of parylene. |
地址 |
Beijing CN |