发明名称 |
Photoconducting layered material arrangement, method of fabricating the photoconducting layered material arrangement, and use of photoconducting layered material arrangement |
摘要 |
A photoconducting layered material arrangement for producing or detecting high frequency radiation includes a semiconductor material including an alloy comprised of InGaAs, InGaAsSb, or GaSb, with an admixture of Al, which material is applied to a suitable support substrate in a manner such that the lattices are suitably adjusted, wherewith the semiconductor material comprised of InGaAlAs, InGaAlAsSb, or GaAlSb has a band gap of more than 1 eV, as a consequence of the admixed proportion of Al. The proportion x of Al in the semiconductor material InyGa1−y−xAlxAs is between x=0.2 and x=0.35, wherewith the proportion y of In may be between 0.5 and 0.55. The support substrate is InP or GaAs. |
申请公布号 |
US2016240707(A1) |
申请公布日期 |
2016.08.18 |
申请号 |
US201615042483 |
申请日期 |
2016.02.12 |
申请人 |
Technische Universität Darmstadt |
发明人 |
Preu Sascha;Gossard Arthur C.;Palmstrom Christopher J.;Lu Hong |
分类号 |
H01L31/0304;H01L31/18;H01L31/109 |
主分类号 |
H01L31/0304 |
代理机构 |
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代理人 |
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主权项 |
1. A photoconducting layered material arrangement for producing or detecting high frequency radiation, wherein a semiconductor material comprised of an alloy comprised of InGaAs, InGaAsSb, or GaSb, with an admixture of Al, is disposed on a suitable support substrate, wherewith the semiconductor material comprised of InGaAlAs, InGaAlAsSb, or GaAlSb has a band gap of more than 1 eV, as a consequence of the admixed proportion of Al. |
地址 |
Darmstadt DE |