发明名称 SEMICONDUCTOR STRUCTURE HAVING A CENTER DUMMY REGION
摘要 A semiconductor structure is provided, including a substrate, a plurality of first semiconductor devices, a plurality of second semiconductor devices, and a plurality of dummy slot contacts. The substrate has a device region, wherein the device region includes a first functional region and a second functional region, and a dummy region is disposed therebetween. The first semiconductor devices and a plurality of first slot contacts are disposed in the first functional region. The second semiconductor devices and a plurality of second slot contacts are disposed in the second functional region. The dummy slot contacts are disposed in the dummy region.
申请公布号 US2016240540(A1) 申请公布日期 2016.08.18
申请号 US201514620212 申请日期 2015.02.12
申请人 UNITED MICROELECTRONICS CORP. 发明人 Hung Ching-Wen;Wu Jia-Rong;Lee Yi-Hui;Huang Chih-Sen;Chen Yi-Wei
分类号 H01L27/11;H01L29/06;H01L23/535;H01L29/78 主分类号 H01L27/11
代理机构 代理人
主权项 1. A semiconductor structure, comprising: a substrate with a device region, wherein the device region is a memory region, wherein the device region comprises a first functional region and a second functional region, and a dummy region is disposed therebetween, wherein the first functional region is a memory cell region; a plurality of first semiconductor devices and a plurality of first slot contacts disposed in the first functional region, wherein a plurality of fin structures stretching along a first direction and a plurality of gate structures stretching along a second direction are disposed in the first functional region, intersecting with each other, thereby forming the plural first semiconductor devices; a plurality of second semiconductor devices and a plurality of second slot contacts disposed in the second functional region; and a plurality of dummy slot contacts disposed in the dummy region.
地址 Hsin-Chu City TW