MODIFIED TUNGSTEN SILICON

摘要

A method for forming a precision resistor or an e-fuse structure where tungsten silicon is used. The tungsten silicon layer is modified by implanting nitrogen into the structure.

主权项

1. A method of forming a semiconductor structure, the method comprising:
forming a tungsten silicon layer on an insulator, wherein the tungsten silicon layer comprises tungsten and silicon; introducing nitrogen into the tungsten silicon layer to form a nitrogen-containing tungsten silicon layer, wherein the nitrogen-containing silicon layer contains nitrogen, wherein a concentration of nitrogen in the nitrogen-containing silicon layer is at least 1 mole %; and forming a first conductive material and a second conductive material on the tungsten silicon layer, wherein the nitrogen-containing tungsten silicon layer forms an electrical connection between the first conductive material and the second conductive material.