发明名称 THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING THE SAME, AND DISPLAY DEVICE COMPRISING THE SAME
摘要 A thin film transistor, a method of manufacturing the thin film transistor, and a display device including the thin film transistor are provided. The thin film transistor comprises an oxide semiconductor layer, a gate electrode, a source electrode and a drain electrode formed on a substrate in a coplanar configuration. A first conductive member is in direct contact with the oxide semiconductor layer and in direct contact with the source electrode. A second conductive member is in direct contact with the oxide semiconductor layer and in direct contact with the drain electrode. The first conductive member and the second conductive member are arranged to decrease resistance between a channel region of the oxide semiconductor layer and the source and drain electrodes.
申请公布号 EP2932532(A4) 申请公布日期 2016.08.17
申请号 EP20130862390 申请日期 2013.12.11
申请人 LG DISPLAY CO., LTD. 发明人 YOUN, SANG CHEON;CHO, MIN GU;KWON, SE YEOUL
分类号 H01L29/786;G02F1/1368;G02F1/167;H01L27/12;H01L27/32;H01L29/66 主分类号 H01L29/786
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