| 摘要 |
In accordance with an embodiment, an anomaly detection method includes acquiring coordinate data of defects or particles generated on a wafer during a semiconductor manufacturing process, calculating an Eberhardt's index from the acquired data, calculating a first probability point, comparing the calculated Eberhardt's index with the first probability point, and judging presence/absence in state of a spatial point distribution relative to the defects or the particles. The first probability point is calculated based on a sample distribution of the Eberhardt's index. |
