Diode laser and method for producing a diode laser with high efficiency

摘要

The method involves forming a Bragg-grating within an aluminum-bearing layer (1), and structuring an aluminum-free mask layer (3) by etching in such a manner that the layer corresponds to a structure of a lacquered mask (4), which partially exposes an aluminum-free layer (2). The aluminum-bearing layer is completely covered by the aluminum-free layer. The aluminum-free layer within a reactor is structured by casting the mask layer by a gaseous etching medium in such a manner that the aluminum-free layer has a grid structure. Another aluminum-bearing layer (5) is attached within the reactor. An independent claim is also included for a diode laser comprising a cladding layer.