发明名称 半導体装置
摘要 To reduce power consumption, a semiconductor device includes a power source circuit for generating a power source potential, and a power supply control switch for controlling supply of the power source potential from the power source circuit to a back gate of a transistor, and the power supply control switch includes a control transistor for controlling conduction between the power source circuit and the back gate of the transistor by being turned on or off in accordance with a pulse signal that is input into a control terminal of the control transistor. The power source potential is intermittently supplied from the power source circuit to the back gate of the transistor, using the power supply control switch.
申请公布号 JP5966077(B2) 申请公布日期 2016.08.10
申请号 JP20150253040 申请日期 2015.12.25
申请人 株式会社半導体エネルギー研究所 发明人 小山 潤;山崎 舜平
分类号 H01L21/822;H01L21/336;H01L21/8242;H01L27/04;H01L27/10;H01L27/108;H01L29/786;H01L29/788;H01L29/792 主分类号 H01L21/822
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