| 发明名称 |
CMP COMPOSITION FOR SILICON NITRIDE REMOVAL |
| 摘要 |
The invention provides a chemical-mechanical polishing composition comprising: (a) colloidal silica particles that are surface modified with metal ions selected from Mg, Ca, Al, B, Be, and combinations thereof, and wherein the colloidal silica particles have a surface hydroxyl group density of from about 1.5 hydroxyls per nm2 to about 8 hydroxyls per nm2 of a surface area of the particles, (b) an anionic surfactant, (c) a buffering agent, and (d) water, wherein the polishing composition has a pH of about 2 to about 7, and wherein the polishing composition is substantially free of an oxidizing agent that oxidizes a metal. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains silicon nitride, silicon oxide, and/or polysilicon. |
| 申请公布号 |
US2016222254(A1) |
申请公布日期 |
2016.08.04 |
| 申请号 |
US201514612736 |
申请日期 |
2015.02.03 |
| 申请人 |
Cabot Microelectronics Corporation |
发明人 |
HUANG Hung-Tsung;YEH Ming-Chih;TSAI Chih-Pin |
| 分类号 |
C09G1/04;H01L21/3105 |
主分类号 |
C09G1/04 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A chemical-mechanical polishing composition comprising:
(a) colloidal silica particles that are surface modified with metal ions selected from Mg, Ca, Al, B, Be, and combinations thereof, and wherein the colloidal silica particles have a surface hydroxyl group density of from about 1.5 hydroxyls per nm2 to about 8 hydroxyls per nm2 of a surface area of the particles, (b) an anionic surfactant, (c) a buffering agent, and (d) water, wherein the polishing composition has a pH of about 2 to about 7, and wherein the polishing composition is substantially free of an oxidizing agent that oxidizes a metal. |
| 地址 |
Aurora IL US |
