| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device and its control method which can prevent deterioration of a static noise margin to stabilize memory access and in addition can avoid deterioration of a write margin without incurring reduction in an operation speed and increase in power consumption.SOLUTION: A semiconductor memory device, which includes a plurality of columns 0 to m each of which includes a plurality of memory cells MC that are provided between bit lines BL<0>, BLX<0> to BL<m>, BLX<m> and word lines WL, includes: step-up circuits PBST and Cap that step up a first power supply voltage VDD to a higher second power supply voltage VDD+α; and memory cell power supply voltage control circuits PK0 and PK1 that perform application of the first power supply voltage or second power supply voltage as memory cell power supply voltage MVDD<m> according to whether data writing or data reading is performed. |
