NON-PLANAR SEMICONDUCTOR DEVICES HAVING MULTI-LAYERED COMPLIANT SUBSTRATES

摘要

Non-planar semiconductor devices having multi-layered compliant substrates and methods of fabricating such non-planar semiconductor devices are described. For example, a semiconductor device includes a semiconductor fin disposed above a semiconductor substrate. The semiconductor fin has a lower portion composed of a first semiconductor material with a first lattice constant (L1), and has an upper portion composed of a second semiconductor material with a second lattice constant (L2). A cladding layer is disposed on the upper portion, but not on the lower portion, of the semiconductor fin. The cladding layer is composed of a third semiconductor material with a third lattice constant (L3), wherein L3>L2>L1. A gate stack is disposed on a channel region of the cladding layer. Source/drain regions are disposed on either side of the channel region.