METHODS TO ACHIEVE HIGH MOBILITY IN CLADDED III-V CHANNEL MATERIALS
摘要
An apparatus including a heterostructure disposed on a substrate and defining a channel region, the heterostructure including a first material having a first band gap less than a band gap of a material of the substrate and a second material having a second band gap that is greater than the first band gap; and a gate stack on the channel region, wherein the second material is disposed between the first material and the gate stack. A method including forming a first material having a first band gap on a substrate; forming a second material having a second band gap greater than the first band gap on the first material; and forming a gate stack on the second material.
申请公布号
EP3050114(A1)
申请公布日期
2016.08.03
申请号
EP20130894636
申请日期
2013.09.27
申请人
INTEL CORPORATION
发明人
DEWEY, GILBERT;METZ, MATTHEW V.;MUKHERJEE, NILOY;CHAU, ROBERT S.;RADOSAVLJEVIC, MARKO;PILLARISETTY, RAVI;CHU-KUNG, BENJAMIN