| 摘要 |
A power semiconductor device is provided comprising: a collector electrode, a collector layer of a second conductivity type, a drift layer of a first conductivity type, a base layer of the second conductivity type, a first insulating layer having an opening, an emitter layer of the first conductivity type, the emitter layer contacts the base layer and separated from the drift layer by one of the first insulating layer or the base layer, a body layer of the second conductivity type arranged laterally to the emitter layer and separated from the base layer by the first insulating layer and the emitter layer, a source region of the first conductivity type separated from the emitter layer by the body layer, an emitter electrode contacted by the source region. The device further comprises a first layer of the second conductivity type contacting the emitter electrode and separated from the base layer, and a second layer of the first conductivity type arranged between the first layer and the base layer and separated from the emitter layer and the source region. A planar MIS gate electrode is arranged laterally from the emitter electrode, a corresponding MIS channel being formable between the source region, the body layer and the emitter layer. A thyristor current path extends between the emitter layer, the base layer and the drift layer through the opening, and a turn-off MIS channel is formable below the planar MIS gate electrode from the first layer, the second layer, the base layer to the drift layer. |
