| 摘要 |
PROBLEM TO BE SOLVED: To provide a reflection type photomask for exposure which allows for precise exposure transfer, without reflecting light from a region other than a circuit pattern region, and to provide a manufacturing method therefor.SOLUTION: The reflection type photomask includes a substrate, a multilayer reflection film formed on the substrate and reflecting the exposure light, and an absorber film formed on the multilayer reflection film and absorbing the exposure light, and is used for lithography using the light having a wavelength of 5-15 nm as the exposure light. A circuit pattern is formed on the absorber film, the multilayer reflection film and the absorber film are removed and a light shielding region exposing the substrate is formed on the outside of a region where the circuit pattern is formed, and a moth-eye structure consisting of a fine uneven pattern is formed in a part of the light shielding region where the substrate is exposed. |
