| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a pattern.SOLUTION: A method for forming a pattern including two or more aligned isolated holes comprises: a process of forming a neutralization film on a substrate having a film, in which a coupled hole pattern composed of coupled two or more virtual holes is formed on the substrate's surface, by applying a resin composition on the substrate so that the resin composition covers a bottom face and side wall of a recess of the coupled hole pattern; a process of forming a layer containing a block copolymer composed of a plurality of kinds of blocks bound to each other on the substrate having the neutralization film formed thereon; a process of phase-separating the layer containing the block copolymer; and a process of forming a plurality of isolated hole patterns inside the coupled hole pattern by selectively removing at least a phase composed of one kind of block of the plurality of kinds of blocks composing the block copolymer, from the layer containing the block copolymer. |
