| 摘要 |
PROBLEM TO BE SOLVED: To provide a group III nitride semiconductor device which allows for exact reduction in the dislocation density of a semiconductor layer, when forming a group III nitride semiconductor layer on an SiC substrate, and to provide a manufacturing method therefor.SOLUTION: When forming a group III nitride semiconductor layer on an SiC substrate, a guide layer of a predetermined thickness is formed on the SiC substrate, a plurality of guides penetrating the guide layer in the thickness direction are formed at a predetermined period, and then a group III nitride semiconductor is grown in each guide of the guide layer. Subsequently, a plurality of nanocolumns consisting of a group III nitride semiconductor are formed on the SiC substrate, at a predetermined period, so that the sidewall of the nanocolumn does not project upward from the guide layer, and the crystal of nanocolumn is not deposited on the surface of the guide layer. At least a portion of the sidewall of a nanocolumn is exposed by removing at least a portion of the guide layer, and a group III nitride semiconductor is grown to bury the nanocolumns. |
