发明名称 |
METAL OXIDE SEMICONDUCTOR (MOS) CAPACITOR WITH IMPROVED LINEARITY |
摘要 |
A MOS capacitor with improved linearity is disclosed. In an exemplary embodiment, an apparatus includes a main branch comprising a first signal path having a first capacitor pair connected in series with reversed polarities and a second signal path having a second capacitor pair connected in series with reversed polarities, the first and second signal paths connected in parallel. The apparatus also includes an auxiliary branch comprising at least one signal path having at least one capacitor pair connected in series with reversed polarities and connected in parallel with the main branch. In an exemplary embodiment, the capacitors are MOS capacitors. |
申请公布号 |
EP3039717(A1) |
申请公布日期 |
2016.07.06 |
申请号 |
EP20140759424 |
申请日期 |
2014.08.22 |
申请人 |
QUALCOMM INCORPORATED |
发明人 |
VAHID FAR, MOHAMMAD, B.;KHALILI, ALIREZA;WANG, CHENG-HAN;CHEN, PHOEBE, PEIHONG |
分类号 |
H01L27/08;H01L23/522;H01L29/94;H01L49/02 |
主分类号 |
H01L27/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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