MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

The present invention provides a semiconductor device which includes a source or drain contact having an MIS structure implemented through a scavenging method, and a method for fabricating the same. The semiconductor device comprises: a substrate; pin-type active patterns which protrude from the substrate and extend in a first direction; a gate electrode which is formed on the pin-type active patterns so as to extend in a second direction crossing the first direction; a source or drain region which is disposed on one side surface of the gate electrode and is formed in the pin-type active patterns; a trench region which is formed in the source or drain region; and a source or drain contact which is formed on the trench region, wherein the source or drain contact includes a first insulating film formed along a lower surface and a side surface of the trench region and a metal oxide film formed along a lower surface and a side surface of the first insulating film.