ZNO BASED TRANSPARENT ELECTRODE HAVING SUPER-LATTICE, OPTOELECTRONIC DEVICE HAVING THE ELECTRODE AND FORMING METHOD FOR THE SAME

摘要

The present invention relates to a zinc oxide-based transparent electrode having a superstructure, which is considerably improved in electrical characteristics by changing a structure of a zinc oxide-based transparent electrode. The present invention is characterized in that the superstructure is formed by alternately stacking a zinc oxide-based transparent semiconductor layer and a transparent insulator layer. According to the present invention, since the superstructure is formed by alternately stacking the zinc oxide-based transparent semiconductor layer and the transparent insulator layer, it is possible to provide a transparent electrode with reduced costs of a material compared to a conventional indium tin oxide transparent electrode, and with improved electrical characteristics compared to a conventional zinc oxide-based transparent electrode. In addition, since an optoelectronic device is applied with the zinc oxide-based transparent electrode having the superstructure with the reduced costs of a material compared to the conventional indium tin oxide transparent electrode and the improved electrical characteristics compared to the conventional zinc oxide-based transparent electrode, manufacturing costs of the optoelectronic device can be reduced compared to the case where the indium tin oxide transparent electrode is used, and the efficiency of the optoelectronic device can be improved compared to the efficiency of an optoelectronic device using the conventional zinc oxide-based transparent electrode.