METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

In a method for fabricating a semiconductor device, a first gate electrode and a second gate electrode are provided on a substrate, the first gate electrode and the second gate electrode being formed in a first region and a second region of the substrate, respectively. A conductive buffer layer is formed along sidewalls of the first gate electrode and the second gate electrode and on upper surfaces of the first gate electrode and second gate electrode. A first mask pattern covering the first region of the substrate on the buffer layer is formed. A first impurity region is formed in the substrate at sides of the second gate electrode using the first mask pattern as a mask of an ion implantation process.

主权项

1. A method for fabricating a semiconductor device, comprising:
forming a first active region and a second active region; forming a gate electrode intersecting the first active region and the second active region on the first active region and the second active region; conformally forming a conductive buffer layer on the first active region, the second active region, and the gate electrode; forming a first mask pattern covering the first active region on the buffer layer; and performing a halo ion implantation process in the second active region at sides of the gate electrode using the first mask pattern.