| 摘要 |
PROBLEM TO BE SOLVED: To detect an internal defect of a TSV formed on a semiconductor wafer with high accuracy when the internal defect of the TSV is inspected using an X-ray transmission image, without generation of overlapped transmission images of the adjacent TSVs.SOLUTION: A method of detecting an internal defect of a TSV formed on a sample, includes: irradiating the sample with an X-ray emitted from an X-ray source; detecting the transmitted X-ray; and processing an X-ray transmission image. The method detects the X-ray transmitting through the sample by: determining a detection azimuth, with respect to the sample, of the X-ray transmitting through the sample that is used for detecting the sample based on information of an arrangement interval, a depth and a planar shape of a structure formed on the sample, with an X-ray detector, and a detection elevation angle with respect to the X-ray source; adjusting a rotation angle of a rotary stage on which the sample is mounted, according to the determined detection azimuth; and detecting the X-ray transmitting through the sample in the state in which the position of the detector is set at the determined detection elevation angle.SELECTED DRAWING: Figure 7 |
