| 摘要 |
A first nickel film (9a) is deposited inside a contact hole (8a) of an interlayer dielectric (8) formed on the front surface side of an n + -type SiC substrate (1). Next, irradiation with a first laser (11) is carried out from the whole of the interlayer dielectric (8) and first nickel film (9a), thereby forming an Ohmic contact with a silicon carbide semiconductor. Next, a second nickel film and a front surface electrode film are deposited on the first nickel film (9a), thereby forming a source electrode. Next, the back surface of the n + -type SiC substrate (1) is ground, and a third nickel film is formed on the ground back surface of the n + -type SiC substrate (1). Irradiation with a second laser is carried out from the whole of the third nickel film, thereby forming an Ohmic contact with the silicon carbide semiconductor. Next, a fourth nickel film and a back surface electrode film are deposited on the third nickel film, thereby forming a drain electrode. By so doing, it is possible to provide a semiconductor device manufacturing method such that it is possible to prevent electrical characteristic deterioration, and to prevent warping and cracking of a wafer. |
