Junction barrier Schottky rectifier

摘要

In the junction barrier Schottky rectifier of the invention, a drift layer (22A, 22B) includes a first drift layer section (22A) and a second drift layer section (22B), wherein a peak net doping concentration of the first drift layer section (22A) is at least two times lower than a minimum net doping concentration of the second drift layer section (22B). For each emitter region (3) the first drift layer section (22A) includes a layer section which is in contact with the respective emitter region (3) to form a pn-junction between the first drift layer section (22A) and the respective emitter region (3), wherein the thickness of this layer section in a direction perpendicular to the interface between the first drift layer section (22A) and the respective emitter region (3) is at least 0.1 µm. The JBS rectifier of the invention has a transition from unipolar to bipolar conduction mode at a lower forward bias due to lowering of electrostatic forces otherwise impairing the transport of electrons toward the emitter regions under forward bias conditions. At the same time the two section drift layer can minimize a snap-back phenomenon seen in common JBS rectifiers.