| 摘要 |
An antistatic structure for an array substrate comprises: an active region (60) of an array substrate and multiple virtual lines (26) surrounding the active region (60), the active region (60) being provided with multiple signal lines (22) and multiple shorting pins (24) electrically connected to the multiple signal lines (22) respectively, the virtual lines (26) being provided adjacently corresponding to the shorting pin (24) located at the outermost position of the active region (60), and the virtual lines (26) being provided in a sawtooth structure near a side (28) of the shorting pin (24). One virtual line is added beside each outermost shorting pin, and a side near the shorting pin of the virtual line is provided with a sawtooth structure, so that in a process of manufacturing an array substrate, especially, during dry etching of an insulating passivation layer and an active layer, static damages on intersecting metal wires at a shorting pin caused by abnormal plasma discharge can be desirably avoided, thereby improving product quality. |
