METHOD TO FABRICATE QUANTUM DOT FIELD-EFFECT TRANSISTORS WITHOUT BIAS-STRESS EFFECT

摘要

Disclosed herein are embodiments of a method to form quantum dot field-effect transistors (QD FETs) having little to no bias-stress effect. Bias-stress effect can be reduced or eliminated through, as an example, the use of a gas or liquid to remove ligands and/or reduce charge trapping on the QD FETs, followed by deposition of an inorganic or organic matrix around the QDs in the FET.

主权项

1. A method for reducing or eliminating bias-stress effect in a quantum dot field-effect transistor (QD FET), the method comprising:
exposing at least one quantum dot in a QD FET to a substance, wherein the substance is configured to modify a surface of the at least one quantum dot to reduce charge trapping and/or ion motion, thereby reducing or eliminating bias-stress effect in the QD FET.