ULTRAHIGH VOLTAGE RESISTOR, SEMICONDUCTOR DEVICE, AND THE MANUFACTURING METHOD THEREOF

摘要

An example provides a semiconductor device including an insulator with a predetermined thickness between a well region of a semiconductor substrate and a resistor of polysilicon. The insulator has a structure that is able to withstand an ultrahigh voltage, and thereby allows the manufacture of a semiconductor device resistor that can bear an ultrahigh voltage without increasing the size of a semiconductor substrate and a semiconductor device including such a resistor. Other examples provide a method for manufacturing such a semiconductor device.

主权项

1. A method for manufacturing a high voltage resistor comprising:
forming a well region on a semiconductor substrate; forming a first insulator layer on a surface of the well region; forming a second insulator layer on a surface of the first insulator layer; and forming a polysilicon layer on a surface of the second insulator layer, wherein a first sloped side region is included when forming the first insulator layer, and a second sloped side region is included when forming the second insulator layer.