METHODS OF FORMING TUNEABLE TEMPERATURE COEFFICIENT FR EMBEDDED RESISTORS

摘要

Methods of forming resistor structures with tunable temperature coefficient of resistance are described. Those methods and structures may include forming an opening in a resistor material adjacent source/drain openings on a device substrate, forming a dielectric material between the resistor material and the source/drain openings, and modifying the resistor material, wherein a temperature coefficient resistance (TCR) of the resistor material is tuned by the modification. The modifications include adjusting a length of the resistor, forming a compound resistor structure, and forming a replacement resistor.

主权项

1. A method of forming a resistor structure comprising:
forming an opening in a resistor material adjacent source/drain openings on a device substrate; doping a portion of the resistor material, in the opening, wherein a portion of the resistor material adjacent the doped portion remains undoped; forming a dielectric material between the undoped resistor portion and the source/drain openings; modifying the doped resistor material, wherein a temperature coefficient of the resistor material is tuned by the modification; and forming a contact material adjacent the doped resistor portion, and forming the contact material in the source/drain openings.